| PART |
Description |
Maker |
| K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4N26323AE-GC25 K4N26323AE-GC20 K4N26323AE-GC22 K4 |
128Mbit GDDR2 SDRAM 128Mbit GDDR2 SDRAM
4M X 32 DDR DRAM, PBGA144
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4D263238G-GC |
128Mbit GDDR SDRAM
|
Samsung Electronic
|
| K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N2632 |
128Mbit GDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY57V281620FTP |
Synchronous DRAM Memory 128Mbit (8Mx16bit)
|
Hynix Semiconductor
|
| HYB25D128160CT-6 HYB25D128160CT-5 HYB25D128160CE-5 |
128Mbit Double Data Rate (DDR) Components
|
Infineon
|
| M65KA128AL M65KA128AL10W5 |
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs
|
STMicroelectronics
|
| TH58V128FT |
128Mbit (16M x 8bit) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M59PW1282-100M1 M59PW1282-100M1T M59PW1282-120M1T |
128Mbit (two 64Mb, x16, Uniform Block, LightFlash™)3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash) 3V Supply, Multiple Memory Product
|
ST Microelectronics
|
